2D scaling behavior of nanotextured GaN surfaces: A case study of hillocked and terraced surfaces-Reference-Cited by-同舟云学术

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2D scaling behavior of nanotextured GaN surfaces: A case study of hillocked and terraced surfaces

Published:2018-07 Issue: Volume:447 Page:845-851
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Mutta Geeta Rani,Carapezzi Stefania^ORCID

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference30 articles.

1. Progress and prospects of group-III nitride semiconductors;Mohammad;Prog. Quantum Electron.,1996

2. Group III nitride semiconductors for short wavelength light-emitting devices;Orton;Rep. Prog. Phys.,1998

3. Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters;Akasaki;Jpn. J. Appl. Phys., Part 1,1997

4. Characteristics of InGaN-based UV/Blue/Green/Amber/red light-emitting diodes;Mukai;Jpn. J. Appl. Phys., Part 1,1999

5. The Blue Laser Diode;Nakamura,1997

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