Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN-Reference-Cited by-同舟云学术

Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN

Published:2022-02 Issue: Volume:138 Page:106297
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Reddy Nallabala Nanda Kumar,Vattikuti S.V. Prabhakar,Verma V.K.,Singh V.R.^ORCID,Alhammadi Salh,Kummara Venkata Krishnaiah^ORCID,Manjunath V.,Dhanalakshmi M.,Minnam Reddy Vasudeva Reddy

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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4. Schottky barrier detector on GaN for visible-blind ultraviolet detection;Chen;Appl. Phys. Lett.,1997

5. High-performance (Al,Ga) N-based solarblind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN;Parish;Appl. Phys. Lett.,1999

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