Activation level in boron-doped thin germanium-on-insulator (GeOI): Extraction method and impact of mobility-Reference-Cited by-同舟云学术

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Activation level in boron-doped thin germanium-on-insulator (GeOI): Extraction method and impact of mobility

Published:2008-10 Issue:5-6 Volume:11 Page:267-270
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hutin Louis,Koffel Stéphane,Le Royer Cyrille,Clavelier Laurent,Scheiblin Pascal,Mazzocchi Vincent,Deleonibus Simon

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium

2. Crystal-trim and its application to investigations on channeling effects during ion implantation

3. Preamorphization implantation-assisted boron activation in bulk germanium and germanium-on-insulator

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Milliseconds Thermal Processing of Boron Hyperdoped Germanium;physica status solidi (a);2024-08-04

2. Electronic and optical properties of highly boron-doped epitaxial Ge/AlAs(001) heterostructures;Journal of Applied Physics;2020-02-21

3. Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry;ACS Applied Electronic Materials;2019-11-11

4. Characterization of strain microgauges for the monitoring of the deformations of a medical needle during its insertion in human tissues;Microsystem Technologies;2015-06-12

5. Process simulation of dopant diffusion and activation in germanium;physica status solidi (a);2013-12-05

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