Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector-Reference-Cited by-同舟云学术

Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector

Published:2020-10 Issue: Volume:117 Page:105190
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Nallabala Nanda Kumar Reddy,Godavarthi Srinivas,Kummara Venkata Krishnaiah,Kesarla Mohan Kumar,Saha Debabrata,Akkera Harish Sharma,Guntupalli Gopi Krishna,Kumar Suresh,Vattikuti S.V. Prabhakar

Funder

Department of Science and Technology (DST), Science and Engineering Research Board, DST

DST-FIST Program-2015

SEED

NRF-Korea

Ministry of science, ICT, and future planning

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference63 articles.

1. Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors