Effect of external electric field on morphology, structure and optical properties of β-Ga2O3 microstructures grown by CVD method-Reference-Cited by-同舟云学术

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Effect of external electric field on morphology, structure and optical properties of β-Ga2O3 microstructures grown by CVD method

Published:2020-09 Issue: Volume:116 Page:105142
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Zhao Shuang,Feng Qiuju,Gao Chong,Wang Deyu,Xing Yan,Xie Jinzhu,Dong Zengjie,Li Mengke,Liang Hongwei

Funder

NSFC

Liaoning provincial natural science foundation of china

Dalian science and technology plan

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. Floating zone growth of β-Ga2O3: a new window material for optoelectronic device applications, Solar Energy Mater;Tomm;Sol. Cell.,2001

2. Effects of crystallinity and point defects on optoelectronic applications of β-Ga2O3 epilayers;Ravadgar;Optic Express,2013

3. High transmittance β-Ga2O3 thin films deposited by magnetron sputtering and post-annealing for solar-blind ultraviolet photodetector;Wang;J. Alloys Compd.,2019

4. High responsivity and high rejection ratio of self-powered solar-blind ultraviolet photodetector based on PEDOT:PSS/β-Ga2O3 organic/inorganic p-n junction;Wang;J. Phys. Chem. Lett.,2019

5. Doped gallium oxide nanowires with waveguiding behavior;Nogales;Appl. Phys. Lett.,2007

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of annealing on the Sn-doped (−201) β-Ga2O3 bulk;Materials Science in Semiconductor Processing;2022-08

2. Mg-doped beta-Ga2O3 films deposited by plasma-enhanced atomic layer deposition system for metal-semiconductor-metal ultraviolet C photodetectors;Materials Science in Semiconductor Processing;2022-05

3. Properties and perspectives of ultrawide bandgap Ga2O3 in optoelectronic applications;Chinese Journal of Physics;2021-10

4. Ta-doped epitaxial β-Ga2O3 films deposited on SrTiO3(100) substrates by MOCVD;Materials Science in Semiconductor Processing;2021-06

5. Comparison of Ga2O3 Films Grown on m- and r-plane Sapphire Substrates by MOCVD;ECS Journal of Solid State Science and Technology;2020-12-01

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