The effect of annealing on the Sn-doped (−201) β-Ga2O3 bulk-Reference-Cited by-同舟云学术

The effect of annealing on the Sn-doped (−201) β-Ga2O3 bulk

Published:2022-08 Issue: Volume:147 Page:106752
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Feng Boyuan^ORCID,He Gaohang,Zhang Xiaodong,Chen Xiao,Li Zhengcheng,Xu Leilei,Huang Rong,Feng Jiagui,Wu Ying,Jia Zhitai,Yu Hongyu,Zeng Zhongming,Ding Sunan^ORCID

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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