Funder
National Natural Science Foundation of China
Key Technology Research and Development Program of Shandong
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference26 articles.
1. Low-pressure CVD-grown beta-Ga2O3 bevel-field-plated Schottky barrier diodes;Joishi;APEX,2018
2. Lateral beta-Ga2O3 Schottky barrier diode on sapphire substrate with reverse blocking voltage of 1.7 kV;Hu;IEEE J. Electron Devices Soc.,2018
3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal beta-Ga2O3 (010) substrates;Higashiwaki;Appl. Phys. Lett.,2012
4. The dawn of Ga2O3 HEMTs for high power electronics - a review;Singh;Mater. Sci. Semicond. Process.,2020
5. Vertical beta-Ga2O3 power transistors: a review;Wong;IEEE Trans. Electron. Dev.,2020
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献