The effects of UV radiation with single and dual wavelengths on the properties of porous ultra low k film
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Preparation of Ultra Low-κ Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition
2. UV curing effects on mechanical and electrical performances of a PECVD non-porogen porous SiOC:H films (in k [2.2–2.4] range) for 45nm node and below
3. Porosity and structure evolution of a SiOCH low k material during post-etch cleaning process
4. Porous Dielectrics in Microelectronic Wiring Applications
5. Impact of wavelength of UV light and UV cure time on chemical and mechanical properties of PECVD deposited porous ultra low-k films
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High‐performance cross‐linked SiCOH/polyimide composite film with an ultralow dielectric constant at high frequency;Journal of Applied Polymer Science;2024-07-18
2. Effect of H atoms and UV wideband radiation on cured low-k OSG films;Journal of Physics D: Applied Physics;2022-04-01
3. Atomic Structure and Optical Properties of Plasma Enhanced Chemical Vapor Deposited SiCOH Low-k Dielectric Film;Optics and Spectroscopy;2021-12-24
4. Relation of Dielectric Constants and Chemical Structures of Low Dielectric Constant SiCOH Films Deposited by Using Octamethylcyclotetrasiloxane and Tetraethylorthosilicate Precursors;Journal of Nanoscience and Nanotechnology;2019-10-01
5. Effect of the C-bridge on UV properties of organosilicate films;Thin Solid Films;2019-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3