High crystal quality strained Si0.5Ge0.5 layer with a thickness of up to 50 nm grown on the three-layer SiGe strain relaxed buffer

Author:

Zhao Zhiqian,Li Yongliang,Gu Shihai,Zhang Qingzhu,Wang Guilei,Li Junjie,Li Yan,Xu Gaobo,Ma Xueli,Wang Xiaolei,Yang Hong,Luo Jun,Li JunFeng,Yin Huaxiang,Wang Wenwu

Funder

National Key Project of Science and Technology of China

Beijing Municipal Education Commission

National Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Strained germanium gate-all-around pMOS device demonstration using selective wire release etch prior to replacement metal gate deposition;Witters;IEEE Trans. Electron Dev.,2017

2. Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: interface trap density reduction and performance improvement by high-pressure deuterium anneal;Mertens,2015

3. High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate;Huang,2016

4. FINFET Technology featuring high mobility SiGe channel for 10nm and beyond;Guo,2016

5. SiGe channel technology: superior reliability toward ultrathin EOT devices—Part I: NBTI;Franco;IEEE Trans. Electron Dev.,2013

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