Synthesis of quantum dot porous silicon as extended gate field effect transistor (EGFET) for a pH sensor application
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference22 articles.
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3. V2O5/WO3 mixed oxide films as pH-EGFET sensor: sequential re-usage and fabrication volume analysis;Guidelli;ECS J. Solid State Sci. Technol.,2012
4. Influences of substrate type on the pH sensitivity of CuS thin films EGFET prepared by spray pyrolysis deposition;Sabah;Mater. Sci. Semicond. Process.,2017
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