High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor-Reference-Cited by-同舟云学术

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High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

Published:2016-06-07 Issue:6 Volume:16 Page:839
ISSN:1424-8220
Container-title:Sensors
language:en
Short-container-title:Sensors

Author:

Al-Hardan Naif,Abdul Hamid Muhammad,Ahmed Naser,Jalar Azman,Shamsudin Roslinda,Othman Norinsan,Kar Keng Lim,Chiu Weesiong,Al-Rawi Hamzah

Funder

Universiti Kebangsaan Malaysia

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Link

http://www.mdpi.com/1424-8220/16/6/839/pdf

Reference49 articles.

1. Porous silicon chemical sensors and biosensors: A review

2. Functionalization of nanostructured porous silicon microcavities for glucose oxidase detection

3. Organic vapour sensing by porous silicon: Influence of molecular kinetics in selectivity studies

4. Porous silicon biosensor: Current status

5. A review on porous silicon based electrochemical biosensors: Beyond surface area enhancement factor

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4. Sensitivity Study of Spin-Coated Metal Oxides Thin Films for Extended Gate Field-Effect Transistor (EGFET) pH Sensor;Transactions on Electrical and Electronic Materials;2024-03-05

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