The growth of solution-gelation TiO2 and its application to InAlAs/InGaAs metamorphic high-electron-mobility transistor
Author:
Funder
Taiwan Ministry of Science and Technology
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
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2. Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method;Sun;Appl. Phys. Lett.,2013
3. Properties of TiO2 thin film on InP substrate prepared by liquid phase deposition;Lee;Jpn. J. Appl. Phys.,2002
4. Structure and hydrophilicity of titanium oxide films prepared by electron beam evaporation;Yang;Surf. Sci.,2004
5. Titanium dioxide thin films by atomic layer deposition: a review;Niemelӓ;Semicond. Sci. Technol.,2017
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