Design considerations of source and drain regions in nano double gate MOSFETs
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Scaling the Si MOSFET: from bulk to SOI to bulk
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1. Control of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile;Transactions on Electrical and Electronic Materials;2016-10-25
2. Numerical investigation of nanoscale double-gate junctionless MOSFET with drain and source extensions including interfacial defects;physica status solidi (c);2016-03-16
3. Performance and Device Design Based on Geometry and Process Considerations for 14/16-nm Strained FinFETs;IEEE Transactions on Electron Devices;2016-03
4. Improved analog and RF performances of gate-all-around junctionless MOSFET with drain and source extensions;Superlattices and Microstructures;2016-02
5. Determination of Source-and-Drain Series Resistance in 16-nm-Gate FinFET Devices;IEEE Transactions on Electron Devices;2015-05
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