Improved analog and RF performances of gate-all-around junctionless MOSFET with drain and source extensions

Author:

Djeffal F.,Ferhati H.,Bentrcia T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 48 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. TCAD model of GAA Nanowire Transistor with silicon oxide/nitride/oxide dielectric;2024 47th International Spring Seminar on Electronics Technology (ISSE);2024-05-15

2. Performance enhancement of junctionless silicon nanotube gate-all-around FETs for nano-scaled devices;Multiscale and Multidisciplinary Modeling, Experiments and Design;2024-03-29

3. A pathway to improve short channel effects of junctionless based FET’s after incorporating technology boosters: a review;Engineering Research Express;2024-02-26

4. Investigation of graded channel effect on analog/linearity parameter analysis of junctionless surrounded gate graded channel MOSFET;SN Applied Sciences;2023-12

5. Performance assessment of a new optimized Junctionless SiSn MOSFET;2023 20th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE);2023-10-25

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