Structural, optical and dielectric properties of HfSiO films prepared by co-evaporation method-Reference-Cited by-同舟云学术

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Structural, optical and dielectric properties of HfSiO films prepared by co-evaporation method

Published:2015-01 Issue: Volume:29 Page:321-325
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Yang Chen,Hang Lingxia,Xu Junqi

Funder

Shaanxi Provincial Education Department program

Shaaxi province Key Laboratory of Thin Films Technology and Test

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Epitaxial growth and electrical properties of ultrathin La2Hf2O7 high-k gate dielectric films

2. Atomic scale microstructures of high-k HfSiO thin films fabricated by magnetron sputtering

3. Temperature dependence of electrical properties for MOS capacitor with HfO2/SiO2 gate dielectric stack

4. Dielectric properties of rf sputtered Ta2O5on rapid thermally nitrided Si

5. Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature Solution-Processable Functional Oxide Materials for Printed Electronics;Green Electronics;2018-06-20

2. The effect of the applied electric field on laser-induced damage of dielectric thin films;Materials Research Express;2017-01-20

3. High-k Dielectric for Nanoscale MOS Devices;Outlook and Challenges of Nano Devices, Sensors, and MEMS;2017

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