Formation of NiCoSix silicide by thermal annealing of Ni/Co bilayer on Si substrate
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
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4. Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs;Japanese Journal of Applied Physics;2014-07-24
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