Boosting crystallization speed in ultrathin phase-change bridge memory device using Sb2Te3
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference37 articles.
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4. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing;Rao;Science,2017
5. Phase-change heterostructure enables ultralow noise and drift for memory operation;Ding;Science,2019
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