Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001) Si faces-Reference-Cited by-同舟云学术

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Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001) Si faces

Published:2006-02 Issue:1-3 Volume:9 Page:275-278
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Sun G.S.,Liu X.F.,Gong Q.C.,Wang L.,Zhao W.S.,Li J.Y.,Zeng Y.P.,Li J.M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Recent Achievements and Future Challenges in SiC Homoepitaxial Growth

2. Growth mechanism of 6H‐SiC in step‐controlled epitaxy

3. Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates

4. Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. (Invited) Study of Minority Carrier Lifetime Killer by Synchrotron X-Ray Topography;ECS Transactions;2016-08-23

2. Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers;physica status solidi (c);2007-04

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