Electron irradiation-induced defects in InP pre-annealed at high temperature
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference25 articles.
1. Characterization of deep level defects in thermally annealed Fe‐doped semi‐insulating InP by photoinduced current transient spectroscopy
2. Characterization of deep level defects in thermally annealed Fe‐doped semi‐insulating InP by thermally stimulated current spectroscopy
3. Traps in undoped semi‐insulating InP obtained by high temperature annealing
4. Spectroscopic investigation of deep levels related to the compensation mechanism of nominally undoped semi-insulating InP
5. Semi-Insulating Behavior of Undoped Inp
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1. 2 GeV Electron Beam Irradiation Effects in Advanced Metallic Glasses;Journal of Minerals and Materials Characterization and Engineering;2022
2. An ion beam facility based on a 3 MV tandetron accelerator in Sichuan University, China;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-03
3. Defects in undoped semi-insulating InP;SPIE Proceedings;2014-02-21
4. Analysis of interface states and series resistances in Au/p-InP structures prepared with photolithography technique;Indian Journal of Physics;2013-05-09
5. Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions;Journal of Radioanalytical and Nuclear Chemistry;2011-03-23
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