Spectroscopic investigation of deep levels related to the compensation mechanism of nominally undoped semi-insulating InP
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference22 articles.
1. Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphere
2. Proc. 5th Conf. on S.I. III–V-Materials;Hofmann,1988
3. Vapor growth of InP for MESFET’S
4. Study of the influence of the phosphorus pressure on the preparation of nominally undoped semi‐insulating InP wafers
5. Compensation mechanisms in nominally undoped semi-insulating InP and comparison with undoped InP grown under stoichiometry control
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades;Crystal Research and Technology;2019-09-30
2. Low temperature formation of highly resistive ZnO films using nonequilibrium N2/O2 plasma generated near atmospheric pressure;Thin Solid Films;2016-10
3. Annihilation of deep level defects in InP through high temperature annealing;Journal of Physics and Chemistry of Solids;2008-02
4. Generation and suppression of deep level defects in InP;Acta Physica Sinica;2007
5. Origin of deep level defect related photoluminescence in annealed InP;Journal of Applied Physics;2006-12-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3