Photoelastic characterization of residual stress in GaAs-wafers-Reference-Cited by-同舟云学术

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Photoelastic characterization of residual stress in GaAs-wafers

Published:2006-02 Issue:1-3 Volume:9 Page:345-350
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Geiler H.D.,Karge H.,Wagner M.,Eichler St.,Jurisch M.,Kretzer U.,Scheffer-Czygan M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Improved crystal growth processes for high quality III–V substrates

2. LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues

3. 200mm GaAs crystal growth by the temperature gradient controlled LEC method

4. Mechanical behaviour of semiconductors;Sumino,1994

5. Photoelastic stress evaluation and defect monitoring in 300-mm-wafer manufacturing

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1. An Intelligent Polarimetric System for High-Throughput and High-Sensitivity Quality Assessment of Commercial Semiconductor Wafers;Communications in Computer and Information Science;2023-10-31

2. Residual stress determination using full-field optical methods;Journal of Physics: Photonics;2021-10-01

3. The Photoelastic Constant of (0001) 4H Silicon Carbide Determined by Scanning Infrared Polariscopy;physica status solidi (a);2021-07-29

4. The Photo‐Elastic Constant of Silicon Reviewed in Experiment and Simulation;physica status solidi (a);2019-07-24

5. III Arsenide;Single Crystals of Electronic Materials;2019

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