The Photoelastic Constant of (0001) 4H Silicon Carbide Determined by Scanning Infrared Polariscopy-Reference-Cited by-同舟云学术

The Photoelastic Constant of (0001) 4H Silicon Carbide Determined by Scanning Infrared Polariscopy

Published:2021-07-29 Issue:23 Volume:218 Page:2100198
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Herms Martin¹^ORCID,Irmer Gert²,Spira Susanne¹,Wagner Matthias¹

Affiliation:

1. PVA Metrology & Plasma Solutions GmbH Im Westpark 10-12 Wettenberg D-35435 Germany

2. Institute of Theoretical Physics TU Bergakademie Freiberg Freiberg D-9596 Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100198

Reference14 articles.

1. Extended Defects in Semiconductors

2. Horizontal Versus Vertical Annealing of Silicon Wafers at High Temperatures

3. Characterization of bonded wafer stacks by use of the photoelastic-analysis-method

4. Photoelastic characterization of residual stress in GaAs-wafers

5. The Photo‐Elastic Constant of Silicon Reviewed in Experiment and Simulation

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1. Origins and characterization techniques of stress in SiC crystals: A review;Progress in Crystal Growth and Characterization of Materials;2024-02

2. Experimental Study on the Photoelastic Coefficient and Its Wavelength Dispersion for Quantitative Imaging of Residual Strain in Commercial SiC Substrates;Journal of Electronic Materials;2023-05-29

3. Observation of in-plane shear stress fields in off-axis SiC wafers by birefringence imaging;Journal of Applied Crystallography;2022-07-30