Properties of dislocation networks formed by Si wafer direct bonding-Reference-Cited by-同舟云学术

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Properties of dislocation networks formed by Si wafer direct bonding

Published:2006-02 Issue:1-3 Volume:9 Page:96-101
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Yu X.,Arguirov T.,Kittler M.,Seifert W.,Ratzke M.,Reiche M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Mil'shtein S, Nikitenko V. Russian Patent 348129; May 1979.

2. Defect electronics in semiconductors;Laako,1971

3. Dislocation Trapping Potential Measured by SEM-CCM

4. Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior

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1. Topological field-effect transistor with quantized on/off conductance of helical/chiral dislocation states;Physical Review B;2023-06-05

2. Direct Observation of Large-Scale Screw Dislocation Grids in Oxide Heteroepitaxies;Nano Letters;2022-02-18

3. Defect Characterization in Silicon by Electron-Beam-Induced Current and Cathodoluminescence Techniques;Defects and Impurities in Silicon Materials;2015

4. Dislocations as native nanostructures - electronic properties;Advances in nano research;2014-03-25

5. Direct Wafer Bonding;Handbook of Wafer Bonding;2012-02-08

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