The contact resistance reduction of Cu interconnects by optimizing the crystal behavior of Ta/TaN diffusion barrier-Reference-Cited by-同舟云学术

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The contact resistance reduction of Cu interconnects by optimizing the crystal behavior of Ta/TaN diffusion barrier

Published:2014-11 Issue: Volume:27 Page:860-864
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Wang Wei-Lin,Peng Kuo-Tzu,Kuo Hsien-Chang,Yeh Ming-Hsin,Chien Hung-Ju,Ying Tzung-Hua

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Physically based simulation of electromigration-induced degradation mechanisms in dual-inlaid copper interconnects

2. Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallization

3. The relationship between deposition conditions, the beta to alpha phase transformation, and stress relaxation in tantalum thin films

4. Texture, structure and phase transformation in sputter beta tantalum coating

5. Crystallographic and morphological characterization of reactively sputtered Ta, TaN and TaNO thin films

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1. RuAl intermetallic compound of low resistivity scaling and high thermal stability as potential interconnect metallization;Applied Physics Letters;2024-04-01

2. Effect of tantalum and Ni Ta barriers on inter-diffusion between nickel coating and GH3535 alloy at 700 °C;Surface and Coatings Technology;2023-08

3. Electrodeposited Ni-W coatings as the effective reaction barrier at Ga-21.5In-10Sn/Cu interfaces;Surfaces and Interfaces;2022-06

4. Influence of TaN films deposited using different N2 flow rates on the properties of Ta and Cu films in advanced 3D NAND memory;Materials Science in Semiconductor Processing;2020-08

5. Effects of Ar Plasma Treatment on the Properties of TaN/Ta Barrier for Copper Interconnects in Advanced 3D NAND Memory;ECS Journal of Solid State Science and Technology;2019

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