Effect of Halo structure variations on the threshold voltage of a 22nm gate length NMOS transistor
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference26 articles.
1. Challenges and performance limitations of high-k and oxynitride gate dielectrics for 90/65nm CMOS technology
2. Scaling CMOS: Finding the gate stack with the lowest leakage current
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