Self-consistent analysis of the band structure of doped lattice-matched GaNAsBi-based QWs operating at 1.55μm
Author:
Funder
DGRST – Tunisia
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference43 articles.
1. New semiconductor alloy GaNAsBi with temperature-insensitive bandgap
2. Molecular-beam epitaxy and characteristics of GaNyAs1−x−yBix
3. Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells
4. Band engineering in dilute nitride and bismide semiconductor lasers
5. Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x
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1. Tunneling in matched AlGaAs/GaAsBiN superlattices;Applied Physics A;2022-04-19
2. The band structure calculation of tensile strained GaNAsBi/GaAs quantum well heterostructure;Micro and Nanostructures;2022-04
3. Biaxial strain effects on the band structure and absorption coefficient of GaAs1-x-yNxBiy/GaAs MQWs calculated using k.p method;Optik;2020-12
4. Impact of Disorder on the Optoelectronic Properties of GaNyAs1−x−yBix Alloys and Heterostructures;Physical Review Applied;2018-10-09
5. Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55 μm;Thin Solid Films;2017-05
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