400°C Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization-Reference-Cited by-同舟云学术

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400°C Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization

Published:2005-02 Issue:1-3 Volume:8 Page:79-82
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Kanno Hiroshi,Aoki Tomohisa,Kenjo Atsushi,Sadoh Taizoh,Miyao Masanobu

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Solid-phase crystallization of Si1−xGex alloy layers

2. Solid-phase crystallization of amorphous SiGe films deposited by LPCVD on SiO2 and glass

3. Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin films

4. Insitutransmission electron microscopy studies of silicide‐mediated crystallization of amorphous silicon

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Au induced lateral crystallization of amorphous Ge with stress stimulation at 130 ○C;AIP Advances;2020-05-01

2. Growth of poly-crystalline silicon–germanium on silicon by aluminum-induced crystallization;Thin Solid Films;2012-09

3. Self-nucleation free and dimension dependent metal-induced lateral crystallization of amorphous germanium for single crystalline germanium growth on insulating substrate;Journal of Applied Physics;2008-09-15

4. Au-induced crystallization of hydrogenated amorphous Si1−xGex (0.2≤x≤1) thin films with chemical source at low temperature;Materials Chemistry and Physics;2008-02

5. Structural and surface properties of Si1−xGex thin films obtained by reduced pressure CVD;Applied Surface Science;2007-10

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