Author:
Teixeira R.C.,Doi I.,Diniz J.A.,Swart J.W.,Zakia M.B.P.
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference12 articles.
1. The revolution in SiGe: impact on device electronics
2. 400°C Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization
3. C. Salm, Advanced Germanium-Silicon for Advanced CMOS Technologies, Ph.D. Thesis, University of Twente, The Netherlands, 1997.
4. R.C. Teixeira, et al., in: Proceedings of the 19th International Symposium on Microelectronics Technology and Devices, SBMicro 2004, Porto de Galinhas-Pe, Brazil, September 7–11, 2004, Proc. Electrochem. Soc. PV2004–03 (2004) 307.
5. Structural and optoelectronic properties of microcrystalline silicon germanium
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献