DC Improvements and Low-Frequency 1/fNoise Characteristics of Complimentary Metal–Oxide–Semiconductor Transistors with a Single n+-Doped Polycrystalline Si/SiGe Gate Stack-Reference-Cited by-同舟云学术

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DC Improvements and Low-Frequency 1/fNoise Characteristics of Complimentary Metal–Oxide–Semiconductor Transistors with a Single n+-Doped Polycrystalline Si/SiGe Gate Stack

Published:2010-04-20 Issue:4 Volume:49 Page:04DC04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Grados Hugo Ricardo Jiménez,Manera Leandro T.,Wada Ricardo,Diniz José Alexandre,Doi Ioshiaki,Tatsch Peter Jurgen,Figueroa Hugo Enrique,Swart Jacobus W.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference10 articles.

1. High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates

2. Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology

3. Gate engineering for deep-submicron CMOS transistors

4. PMOS transistors in LPCVD polycrystalline silicon-germanium films

5. Suppression of Boron Penetration in P+-Poly-SiGe Gate P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using NH3-Nitrided and N2O-Grown Gate Oxides

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate;Acta Physica Sinica;2012

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