Author:
Leitz Christopher,Yang Vicky,Carroll Mark,Langdo Thomas,Westhoff Richard,Vineis Christopher,Bulsara Mayank
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. Rim K, Chu J, Chen H, Jenkins KA, Kanarsky T, Lee K, Mocuta A, Zhu H, Roy R, Newbury J, Ott J, Petrarca K, Mooney P, Lacey D, Koester S, Chan K, Boyd D, Ieong M, Wong H-S. Characteristics and device design of sub-100nm strained Si N- and P-MOSFETs. Symposium on VLSI Technology 2002; p. 98–9.
2. Wang HC-H, Wang Y-P, Chen S-J, Ge C-H, Ting SM, Kung J-Y, Hwang R-L, Chiu H-K, Sheu LC, Tsai P-Y, Yao L-G, Chen S-C, Tao H-J, Yeo Y-C, Lee W-C, Hu C. Substrate-strained silicon technology: process integration. IEDM Tech Digest 2003; 3.4.1–4.
3. Sanuki T, Oishi A, Morimasa Y, Aota S, Kinoshita T, Hasumi R, Takegawa Y, Isobe K, Yoshimura H, Iwai M, Sunouchi K, Noguchi T. Scalability of strained silicon CMOSFET and high drive current enhancement in the 40nm gate length technology. IEDM Tech Digest 2003; 3.5.1–4.
4. Strained silicon joins the drive to keep CMOS chips on course;Bulsara;Compound Semi,2002
5. Westhoff R, Carlin J, Erdtmann M, Langdo T, Leitz C, Yang V, Petrocelli K, Bulsara M, Fitzgerald E, Vineis C. A novel, high quality SiGe graded buffer growth process using GeCl4. Proceedings of the 206th Electrochemical Society Meeting, proceedings in print (2004).
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