Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs-Reference-Cited by-同舟云学术

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Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

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Container-title:2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)
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Author:

Rim K.,Chu J.,Chen H.,Jenkins K.A.,Kanarsky T.,Lee K.,Mocuta A.,Zhu H.,Roy R.,Newbury J.,Ott J.,Petrarca K.,Mooney P.,Lacey D.,Koester S.,Chan K.,Boyd D.,Ieong M.,Wong H.-S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7925/21853/01015406.pdf?arnumber=1015406

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