Low-temperature molecular beam epitaxy of Ge on Si-Reference-Cited by-同舟云学术

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Low-temperature molecular beam epitaxy of Ge on Si

Published:2005-02 Issue:1-3 Volume:8 Page:35-39
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Leitão J.P.,Fonseca A.,Sobolev N.A.,Carmo M.C.,Franco N.,Sequeira A.D.,Burbaev T.M.,Kurbatov V.A.,Rzaev M.M.,Pogosov A.O.,Sibeldin N.N.,Tsvetkov V.A.,Lichtenberger H.,Schäffler F.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation

2. Extended wavelength region of self-assembled Ge/Si(001) islands capped with Si at different temperatures

3. High-Temperature Double-Crystal X-Ray Diffractometer for In-Situ Studies, the Hotbird

4. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells

5. Photoluminescence of confined excitons in MBE-grown Si1 − xGex/Si(100) single quantum wells

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-quality Ge film grown on Si substrate and its thermodynamic mechanism;Vacuum;2021-04

2. The microstructural and optical properties of Ge/Si heterostructures grown by low-temperature molecular beam epitaxy;Journal of Materials Research;2013-05-17

3. Germanium-Based Substrate Defects;Extended Defects in Germanium

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