Formation and characterization of Ge 1−x−y Si x Sn y /Ge 1−x Sn x /Ge 1−x−y Si x Sn y double heterostructures with strain-controlled Ge 1−x−y Si x Sn y layers-Reference-Cited by-同舟云学术

Formation and characterization of Ge 1−x−y Si x Sn y /Ge 1−x Sn x /Ge 1−x−y Si x Sn y double heterostructures with strain-controlled Ge 1−x−y Si x Sn y layers

Published:2017-11 Issue: Volume:70 Page:156-161
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Fukuda Masahiro,Yamaha Takashi,Asano Takanori,Fujinami Syunsuke,Shimura Yosuke,Kurosawa Masashi,Nakatsuka Osamu,Zaima Shigeaki

Funder

Grant-in-Aid for Scientific Research

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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