Formation of ultra-thin Ge1−xSnx/Ge1−x−ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode-Reference-Cited by-同舟云学术

Formation of ultra-thin Ge1−xSnx/Ge1−x−ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode

Published:2020-12-07 Issue:23 Volume:117 Page:232104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Suwito Galih Ramadana¹^ORCID,Fukuda Masahiro²,Suprayoga Edi³^ORCID,Ohtsuka Masahiro²⁴^ORCID,Hasdeo Eddwi Hesky³⁵^ORCID,Nugraha Ahmad Ridwan Tresna³^ORCID,Sakashita Mitsuo²,Shibayama Shigehisa²,Nakatsuka Osamu²⁶^ORCID

Affiliation:

1. Department of Applied Physics, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2. Department of Materials Physics, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

3. Research Center for Physics, Indonesian Institute of Sciences (LIPI), Tangerang Selatan 15314, Indonesia

4. Advanced Measurement Technology Center, Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

5. Department of Physics and Materials Science, University of Luxembourg, L-1511 Luxembourg, Luxembourg

6. Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan

Funder

Fonds National de la Recherche Luxembourg

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0024905

Reference26 articles.

1. Mid-infrared photonics in silicon and germanium

2. Optical gas sensing: a review

3. Advances in mid-infrared detection and imaging: a key issues review

4. Lasing in direct-bandgap GeSn alloy grown on Si

5. GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

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