Enhanced performance of ultraviolet photodetector based on amorphous Ga2O3 films through formation of heterojunction with ZnO nanoparticles-Reference-Cited by-同舟云学术

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Enhanced performance of ultraviolet photodetector based on amorphous Ga2O3 films through formation of heterojunction with ZnO nanoparticles

Published:2024-04 Issue: Volume:173 Page:108174
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Mi Wei,Luo Liyuan,He Lin’an^ORCID,Wang Di,Zhou Liwei,Zhu Yan,Xiao Longfei,Xu Mingsheng,Zhang Xingcheng,Qi Dongdong,Luan Chongbiao,Zhao Jinshi

Publisher

Elsevier BV

Reference52 articles.

1. Vertical solar-blind deep-ultraviolet Schottky photodetectors based on beta-Ga2O3 substrates;Oshima;APEX,2008

2. Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, beta-Ga2O3, and diamond;Kim;J. Mater. Chem. C,2017

3. Growth and characterization of alpha-phase Ga2-xSnxO3 thin films for solar-blind ultraviolet applications;Zhao;Semicond. Sci. Technol.,2016

4. Ultrahigh-performance solar-blind photodetectors based on individual single-crystalline In2Ge2O7 nanobelts;Li;Adv. Mater.,2010

5. Review of gallium-oxide-based solar-blind ultraviolet photodetectors;Chen;Photon. Res.,2019

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertically Graded Oxygen Vacancies in Amorphous Ga₂O₃ for Offsetting the Conventional Trade-Off between Photoresponse and Response Time in Solar-Blind Photodetectors;ACS Applied Electronic Materials;2024-06-03

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