Vertically Graded Oxygen Vacancies in Amorphous Ga<sub>2</sub>O<sub>3</sub> for Offsetting the Conventional Trade-Off between Photoresponse and Response Time in Solar-Blind Photodetectors-Reference-Cited by-同舟云学术

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Vertically Graded Oxygen Vacancies in Amorphous Ga₂O₃ for Offsetting the Conventional Trade-Off between Photoresponse and Response Time in Solar-Blind Photodetectors

Published:2024-06-03 Issue:6 Volume:6 Page:4746-4753
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kaur Damanpreet¹^ORCID,Dahiya Rohit¹,Ahmed Nadeem²,Kumar Mukesh¹^ORCID

Affiliation:

1. Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab−140001, India

2. Laboratory for Nanoscale Optics and Metamaterials, Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab−140001, India

Funder

Indian Institute of Technology Ropar

Defence Metallurgical Research Laboratory

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00759

Reference34 articles.

1. A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

2. A review of Ga2O3materials, processing, and devices

3. Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity

4. High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

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