Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectrics-Reference-Cited by-同舟云学术

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Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectrics

Published:2006-08 Issue:4-5 Volume:9 Page:685-689
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Wadsworth H.J.,Bhattacharya S.,McNeill D.W.,Ruddell F.H.,Armstrong B.M.,Gamble H.S.,Denvir D.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference3 articles.

1. Dominant Surface Electronic Properties of SiO2‐Passivated Ge Surfaces as a Function of Various Annealing Treatments

2. Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

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1. Investigation of electrical properties at ambient and high temperature of Al 2 O 3 based Schottky barrier diodes structure using I-V, C-V and G/ω-V measurements;2024-09-06

2. Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53);ECS Transactions;2019-12-17

3. Ultrathin Vapor–Liquid–Solid Grown Titanium Dioxide-II Film on Bulk GaAs Substrates for Advanced Metal–Oxide–Semiconductor Device Applications;IEEE Transactions on Electron Devices;2018-04

4. A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers;Journal of Applied Physics;2011-01-15

5. Dynamics of Network Formers and Modifiers in Mixed Cation Silicate Glasses;Zeitschrift für Physikalische Chemie;2010-11-01

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