Formation energy and migration barrier of a Ge vacancy from ab initio studies
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
2. Effect of hydrostatic pressure, temperature, and doping on self-diffusion in germanium
3. Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium Substrates
4. Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals
5. Investigations of Oxygen-Defect Interactions between 25 and 700°K in Irradiated Germanium
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3. Seventy-Five Years since the Point-Contact Transistor: Germanium Revisited;Applied Sciences;2022-11-24
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5. Nitrogen-vacancy defects in germanium;AIP Advances;2022-04-01
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