Electrical and structural characterization of PLD grown CeO2–HfO2 laminated high-k gate dielectrics

Author:

Karakaya K.,Barcones B.,Rittersma Z.M.,van Berkum J.G.M.,Verheijen M.A.,Rijnders G.,Blank D.H.A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Houssa M, editor, High-κ dielectrics. Bristol: Institute of Physics Publishing; 2004. p. 3–13.

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Hillenius SJ, In: Sze SM, editor. Modern semiconductor device physics. New York: Wiley; 1998. p. 138.

4. Schlom DG, Billman CA, Haeni JH, Lettieri J, Tan PH, Held RRM, et al. In: Ogale SB, editor. Thin films and heterostructures for oxide electronics. New York: Springer Science and Business Media; 2005. p. 29–77.

5. High carrier density CeO2 dielectrics—implications for MOS devices

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