Influence of Rapid Thermal Annealing on the Structure and Electrical Properties of Ce-Doped HfO 2 Gate Dielectric
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/31/7/077702/pdf
Reference27 articles.
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3. Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
4. Electrical characteristics of MOS capacitor using amorphous Gd2O3-doped HfO2 insulator
5. A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric
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