High carrier density CeO2 dielectrics—implications for MOS devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Ceramics and Composites
Reference13 articles.
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5. Hysteresis characteristics of vacuum-evaporated ferroelectric PbZr0.4Ti0.6O3 films on Si(111) substrates using CeO2 buffer layers;Park;Appl. Surf. Sci.,1997
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