Low temperature processed hafnium oxide: Structural and electrical properties
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric
2. Dielectric property and thermal stability of HfO2 on silicon
3. Band offsets of high dielectric constant gate oxides on silicon
4. Influence of annealing condition on the properties of sputtered hafnium oxide
5. High quality r.f. sputtered metal oxides (Ta2O5, HfO2) and their properties after annealing
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