Funder
National Natural Science Foundation of China
Chinese Academy of Sciences
Youth Innovation Promotion Association
Foundation for Innovative Research Groups of the National Natural Science Foundation of China
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors;Auth,2012
2. A 14nm logic technology featuring 2nd -generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 μm 2, SRAM cell size;Natarajan,2014
3. Tri-Gate bulk MOSFET design for CMOS scaling to the end of the roadmap;Sun;IEEE Electron. Device Lett.,2008
4. Improved short channel effect control in bulk FinFETs with vertical implantation to form self-aligned halo and punch-through stop pocket;Xu;IEEE Electron. Device Lett.,2015
5. Vertically stacked silicon nanowire transistors fabricated by inductive plasma etching and stress-limited oxidation;Ricky;IEEE Electron. Device Lett.,2009
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