Electrically active defects induced by hydrogen and helium implantations in Ge-Reference-Cited by-同舟云学术

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Electrically active defects induced by hydrogen and helium implantations in Ge

Published:2008-10 Issue:5-6 Volume:11 Page:354-359
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Markevich V.P.,Bernardini S.,Hawkins I.D.,Peaker A.R.,Kolkovsky Vl.,Nylandsted Larsen A.,Dobaczewski L.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. Germanium-based technologies: from materials to devices,2007

2. Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates

3. Silicon on insulator material technology

4. Donor level of bond-center hydrogen in germanium

5. Hydrogen-related shallow donors in Ge crystals implanted with protons

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of irradiation with 15-MeV protons on the compensation of Ge〈Sb〉 conductivity;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2017-05

2. Donor-vacancy pairs in irradiated n-Ge: A searching look at the problem;AIP Conference Proceedings;2014

3. Production and Annealing of Defects in Proton-Irradiated n-Ge;Solid State Phenomena;2013-10

4. Electrical characterisation of ruthenium Schottky contacts on n-Ge (100);Physica B: Condensed Matter;2012-05

5. Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2MeV proton irradiation;Physica B: Condensed Matter;2011-08

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