Properties of zirconium silicate thin films prepared by laser ablation-Reference-Cited by-同舟云学术

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Properties of zirconium silicate thin films prepared by laser ablation

Published:2004-01 Issue:4-6 Volume:7 Page:209-214
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Filipescu M.,Scarisoreanu N.,Matei D.G.,Dinescu G.,Ferrari A.,Balucani M.,Toma O.,Ghica C.,Nistor L.C.,Dinescu M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Generalized scaling theory and its application to a ¼ micrometer MOSFET design

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Reliability and integration of ultra-thin gate dielectrics for advanced CMOS

4. Modeling and simulation of tunneling through ultra-thin gate dielectrics

5. Intermixing at the tantalum oxide/silicon interface in gate dielectric structures

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1. Influence of post-deposition annealing time on oxygen gas sensing behaviour of Al/La0·50Ce0·50O1·75/Si metal-oxide-semiconductor capacitor;Materials Research Innovations;2014-12-05

2. Investigation of Ta2O5 and TaSixOy thin films obtained by radio frequency plasma assisted laser ablation for gate dielectric applications;Applied Surface Science;2013-07

3. Pulsed laser deposition of Mg–Al layered double hydroxide with Ag nanoparticles;Applied Physics A;2012-08-28

4. Morphological, optical and electrical properties of samarium oxide thin films;Thin Solid Films;2012-08

5. Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering;Journal of Alloys and Compounds;2012-07

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