Structural and optical characterization of type II In0.14Ga0.86As0.13Sb0.87/GaSb heterostructure doped with zinc grown by liquid phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Spectroscopy
Reference25 articles.
1. Growth and structural characterization of GaInAsSb films on GaSb substrates
2. Type II heterojunctions in the GaInAsSb/GaSb system
3. A Theoretical Study of the Vibrational Properties of InxGa1-xAs1-ySby Quaternary Alloys
4. Long‐wavelength lattice dynamics of GaxIn1−xAsySb1−yquaternary alloys
5. Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs
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1. Interfaces-engineered M-structure for infrared detectors;Opto-Electronics Review;2024-04-11
2. Influence of indium and arsenic balance on the Raman spectra of GaInAsSb alloys;Vibrational Spectroscopy;2022-11
3. Growth mechanism and physical properties of the type-I In0.145Ga0.855As Sb1−y/GaSb alloys with low As content for near infrared applications;Journal of Alloys and Compounds;2019-11
4. Characterization of LPE-Ga0.86In0.14As0.13Sb0.87;MRS Advances;2017-09-05
5. Characterization of Zn-Doped Ga0.86In0.14As0.13Sb0.87;Brazilian Journal of Physics;2014-10-01
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