Growth and structural characterization of GaInAsSb films on GaSb substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. A review of progress in thermophotovoltaic generation of electricityfnafnaI began writing this paper immediately after the Third nrel Conference on Thermophotovoltaic Genertion of materials, devices, and systems; substantial gains in fundamental understanding and performance of the quaternary alloy GaInAsSb; the introduction of new radiator concepts; and more attention being paid to modeling of both real and conceptual systems. There was also further evidence of interest in non-military applications, particularly from the European and Japanese attendees.
2. InGaAsSb photovoltaic cells with enhanced open-circuit voltage
3. High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices
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1. Characterization of LPE-Ga0.86In0.14As0.13Sb0.87;MRS Advances;2017-09-05
2. Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets;Nanotechnology;2016-11-17
3. Electrical and Optical Characteristics of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb Heterostructure Photodiode;Acta Physica Polonica A;2015-04
4. Structural and optical characterization of type II In0.14Ga0.86As0.13Sb0.87/GaSb heterostructure doped with zinc grown by liquid phase epitaxy;Vibrational Spectroscopy;2013-09
5. Optical characterization of Zn-doped In0.14Ga0.86As0.13Sb0.87 layers grown by liquid phase epitaxy;Journal of Luminescence;2013-02
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