Characterization of high-k gate dielectric and metal gate electrode semiconductor samples with a total reflection X-ray fluorescence spectrometer

Author:

Sparks Chris M.,Beebe Meredith R.,Bennett Joe,Foran Brendan,Gondran Carolyn,Hou Alex

Publisher

Elsevier BV

Subject

Spectroscopy,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Reference18 articles.

1. ITRS site: http://public.itrs.net./Files/2003ITRS/Home2003.htm.

2. Future IC fabrication rests on solutions to circuit and device scaling issues;Zeitzoff;Solid State Technol,2002

3. High-k materials challenge deposition, etch, and metrology;Braun;Semicond. Int,2002

4. Metal gates only: high-k need not apply;Singer;Semicond. Int,2003

5. Example of an atomic layer deposition process: http://www.asm.com/proc_alcvd.asp.

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