High temperature field effect hydrogen and hydrocarbon gas sensors based on SiC MOS devices-Reference-Cited by-同舟云学术

High temperature field effect hydrogen and hydrocarbon gas sensors based on SiC MOS devices

Published:2008-08 Issue:2 Volume:133 Page:705-716
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Trinchi Adrian,Kandasamy Sasikaran,Wlodarski Wojtek

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference108 articles.

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2. International Organization for Standardization (ISO) Basic Considerations for the Safety of Hydrogen Systems ISO/TR, 2004.

3. High temperature sensors based on metal-insulator-silicon carbide devices;Spetz;Phys. Status Solidi A,1997

4. SiC for sensors and high-temperature electronics;Muller;Sens. Actuators A,1994

5. Progress in silicon-carbide semiconductor electronics technology;Neudeck;J. Electron. Mater.,1995

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