Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Nitride Semiconductors and Devices;Morkoç,1999
2. Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition
3. Depth profiling of GaN by cathodoluminescence microanalysis
4. Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films
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1. Nitrogen vacancy type defect luminescence of AlN nanopowder;Optical Materials;2020-10
2. Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3;ECS Journal of Solid State Science and Technology;2019
3. Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3;ECS Journal of Solid State Science and Technology;2019
4. Vapor Growth of III Nitrides;Springer Handbook of Crystal Growth;2010
5. AlN Bulk Crystal Growth by Physical Vapor Transport;Springer Handbook of Crystal Growth;2010
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